InAs nanowires and whiskers grown by reaction of indium with GaAs
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Abstract
Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N2 or NH3 to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 μm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate. © 2003 American Institute of Physics.
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Noor Mohammad</name><affiliation><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, Howard University, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Jacobs, Randolph N" uniqKey="Jacobs R">Randolph N. Jacobs</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Department of Materials and Nuclear Engineering, University of Maryland, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Salamanca Riba, Lourdes" uniqKey="Salamanca Riba L">Lourdes Salamanca Riba</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Department of Materials and Nuclear Engineering, University of Maryland, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Felt, Frederick" uniqKey="Felt F">Frederick Felt</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, Maryland 20771</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt</wicri:cityArea></affiliation></author><author><name sortKey="Jah, Muzar" uniqKey="Jah M">Muzar Jah</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, Maryland 20771</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt</wicri:cityArea></affiliation></author><author><name sortKey="Sharma, Ashok" uniqKey="Sharma A">Ashok Sharma</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, Maryland 20771</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt</wicri:cityArea></affiliation></author><author><name sortKey="Lakins, Darryl" uniqKey="Lakins D">Darryl Lakins</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, Maryland 20771</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Component Technology and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0240769</idno><date when="2003-05-26">2003-05-26</date><idno type="stanalyst">PASCAL 03-0240769 AIP</idno><idno type="RBID">Pascal:03-0240769</idno><idno type="wicri:Area/Main/Corpus">00D512</idno><idno type="wicri:Area/Main/Repository">00C338</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Scanning electron microscopy</term><term>Semiconductor growth</term><term>Transmission electron microscopy</term><term>Whiskers</term><term>X-ray chemical analysis</term><term>nanowires</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6146</term><term>8107B</term><term>6870</term><term>8105E</term><term>Etude expérimentale</term><term>Trichite</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Croissance semiconducteur</term><term>Analyse chimique RX</term><term>Microscopie électronique balayage</term><term>Microscopie électronique transmission</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N<sub>2</sub> or NH<sub>3</sub> to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 μm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAs nanowires and whiskers grown by reaction of indium with GaAs</s1></fA08><fA11 i1="01" i2="1"><s1>HE (Maoqi)</s1></fA11><fA11 i1="02" i2="1"><s1>FAHMI (M. M. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>MOHAMMAD (S. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0240769</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N<sub>2</sub> or NH<sub>3</sub> to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 μm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. 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